• 专利标题:   Manufacture of graphene film used for e.g. gas barrier film, involves depositing graphene film on base material surface maintained at specified temperature and pressure by microwave surface wave plasma chemical vapor deposition method.
  • 专利号:   JP2013249530-A
  • 发明人:   TSUGAWA K, YAMADA T, HASEGAWA M
  • 专利权人:   DOKURITSU GYOSEI HOJIN SANGYO GIJUTSU SO
  • 国际专利分类:   C01B031/02, C23C016/26
  • 专利详细信息:   JP2013249530-A 12 Dec 2013 C23C-016/26 201401 Pages: 17 Japanese
  • 申请详细信息:   JP2013249530-A JP127249 04 Jun 2012
  • 优先权号:   JP127249

▎ 摘  要

NOVELTY - A graphene film is deposited on base material (105) surface by microwave surface wave plasma chemical vapor deposition method in the mixed gas atmosphere. The base material pressure is 50 Pa or less, and temperature is 200-700 degrees C. The mixed gas consists of carbon containing gas and helium, or carbon containing gas, oxidation inhibitor, and helium. USE - Manufacture of graphene film (claimed). Uses include but are not limited to gas barrier films, electrode materials of touch panel, transparent conductive film for solar cells, battery, thermal radiation films. ADVANTAGE - The method efficiently provides graphene film with high purity, high yield. The graphene film has excellent transparency, electroconductivity, thermal conductivity, and gas barrier property. DESCRIPTION OF DRAWING(S) - The drawing shows the microwave surface wave plasma chemical vapor deposition apparatus. Plasma generation chamber (101) Quartz component (103) Base material (105) Exhaust gas (108) Gas inlet tube (109) Reactor (110)