▎ 摘　　要

NOVELTY - The method (1100) involves providing (1102) a substrate including a nanorod extending there. The nanorod includes an insulating outer surface that traverses a circumference of the nanorod. A carbon-containing layer over the insulating outer surface is formed (1104) depositing a metal layer over the carbon-containing layer by a vapor phase deposition process. An annealing process is performed (1108) and serves to convert the carbon-containing layer into a carbon nanotube (CNT) after depositing the metal layer. The metal layer includes one of nickel, copper, platinum, Iron, carbon monoxide, gold, and a copper nickel alloy. USE - Method for providing uniform, large-area graphene by way of transfer-free, direct-growth process. ADVANTAGE - The formation of high-quality, large-area graphene over any type of surface topography and/or surface structure, avoiding the challenges associated with conventional graphene transfer techniques, while also providing for the fabrication of CNT/graphene structures and devices having desirably tuned properties. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a device for providing uniform, large-area graphene by way of transfer-free, direct-growth process. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating a method of fabricating a graphene device. Method for providing uniform, large-area graphene (1100) Step for providing a substrate (1102) Step for forming a carbon-containing layer (1104) Step for forming metal layer (1106) Step for performing annealing process (1108)