▎ 摘　　要

NOVELTY - Preparation of single crystal graphene film involves laminating a copper foil and a base metal foil, the melting point of the base metal foil is higher than the melting point of the copper foil, heating the bonded copper foil and the base metal foil to the melting temperature of the copper foil in a protective atmosphere, performing roll-to-roll monocrystalline graphene film growth on the surface of the molten copper foil by chemical vapor deposition under the melting temperature condition, alternatively, growing the roll-to-roll single crystal graphene film on the surface of the annealed copper foil by chemical vapor deposition, after annealing the bonded copper foil and the base metal foil at the melting temperature. USE - Preparation of single crystal graphene film used for manufacturing electronic devices (all claimed). ADVANTAGE - The method improves the preparation efficiency of the single crystal graphene film, and realizes the mass preparation of the single crystal graphene film. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for single crystal graphene film.