▎ 摘　　要

NOVELTY - Growing graphene on silicon carbide surface, comprises: (i) pre-treating the silicon carbide powder under reducing atmosphere at 600-1200 degrees C; and (ii) further pre-treating the silicon carbide under inert atmosphere, preserving heat at 1100-1800 degrees C to obtain desired growth on surface of silicon carbide. USE - The graphene and silicon carbide composite catalyst is useful for carbon dioxide photo catalyst reaction of electrolyzed water (claimed). DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) graphene and silicon carbide composite catalyst, prepared by growing graphene on silicon carbide surface; and (2) use of graphene and silicon carbide composite catalyst in carbon dioxide photo catalyst reaction of electrolyzed water.