▎ 摘　　要

NOVELTY - The magnetic field sensor device comprises a semiconductor body (20) having a top (24) and an underside (28). The semiconductor body has a substrate layer (32) and a passivation layer (34) formed above the substrate layer and on the upper side of the semiconductor body. Electronic components (36) are formed in the substrate layer. A Hall plate (40) is provided on the top of the semiconductor body and above the passivation layer. The Hall plate comprises graphene compound. The Hall plate comprises four spaced contacts. The contacts are electrically connected to the substrate layer. USE - Magnetic field sensor device. ADVANTAGE - The magnetic field sensor device can be simply and economically manufactured with improved charge carrier mobility. DETAILED DESCRIPTION - The magnetic field sensor device comprises a semiconductor body (20) having a top (24) and an underside (28). The semiconductor body has a substrate layer (32) and a passivation layer (34) formed above the substrate layer and on the upper side of the semiconductor body. Electronic components (36) are formed in the substrate layer. A Hall plate (40) is provided on the top of the semiconductor body and above the passivation layer. The Hall plate comprises graphene compound. The Hall plate comprises four spaced contacts. The contacts are electrically connected to the substrate layer. The Hall plate comprises a two-dimensional graphene layer so that a current flow takes place only parallel to a layer plane. The Hall plate includes a set of graphene monolayers. The graphene monolayers and/or silicon-boron nitride layers are arranged between the Hall plate and the passivation layer and arranged above the Hall plate. An electrically conductive shield layer is formed within the passivation layer or within a conductor track plane and below the Hall plate or above the Hall plate. The shielding layer is applied with a reference potential. An electrical operative connection is formed between the shielding layer and a circuit unit. The shielding layer is constructed as a control electrode for influencing the sensitivity of the Hall plate. The electronic components comprise metal oxide semiconductor transistors. The transistors are provided in an electrical operative connection with the Hall plate. The semiconductor body is arranged non-positively on a metallic carrier plate. The semiconductor body and the Hall plate are arranged in a common integrated circuit package. The Hall plate is secured only to an edge region. DESCRIPTION OF DRAWING(S) - The figure shows a schematic cross sectional view of a magnetic field sensor device. Semiconductor body (20) Top (24) Underside (28) Substrate layer (32) Passivation layer (34) Electronic components (36) Hall plate. (40)