• 专利标题:   Preparation of graphene thin film comprises dissolving polymethyl methacrylate in acetone solution, dropping solution on upper metal sheet, covering with quartz glass, annealing in furnace, and naturally cooling to room temperature.
  • 专利号:   CN103754864-A
  • 发明人:   TAO C, ZHANG D, DING L, SONG X, HONG R
  • 专利权人:   UNIV SHANGHAI SCI TECHNOLOGY
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   CN103754864-A 30 Apr 2014 C01B-031/04 201442 Pages: 8 Chinese
  • 申请详细信息:   CN103754864-A CN10000507 02 Jan 2014
  • 优先权号:   CN10000507

▎ 摘  要

NOVELTY - Preparation of graphene thin film comprises dissolving polymethyl methacrylate in acetone solution, forming concentration of 1-5 g/L acetone solution of polymethyl methacrylate, dropping solution on upper metal sheet, forming one layer of polymethyl methacrylate film, with thickness of 0.1-1 mm copper foil, nickel foil, gold foil or silver foil, forming polymethacrylic acid methyl ester film on metal sheet and forming one layer of polymethyl methacrylate thin film and covering with quartz glass, annealing in furnace, naturally cooling to room temperature, and obtaining graphene thin film. USE - Method of preparation of graphene thin film (claimed). DETAILED DESCRIPTION - Preparation of graphene thin film comprises dissolving polymethyl methacrylate in acetone solution, forming concentration of 1-5 g/L acetone solution of polymethyl methacrylate, dropping solution at 0.1-1 ml/minute on upper metal sheet, forming one layer of polymethyl methacrylate film, with thickness of 0.1-1 mm copper foil, nickel foil, gold foil or silver foil, forming polymethacrylic acid methyl ester film on metal sheet and forming one layer of polymethyl methacrylate thin film and covering with quartz glass into 99.99% nitrogen, annealing in furnace at 800-1000 degrees C for 120 minutes, naturally cooling to room temperature, and obtaining graphene thin film.