• 专利标题:   Graphene piezoresistive factors detecting method, involves adhering graphene silicon sheet with detection electrodes, and adhering highly precise stress sheet on surface of equal-stress cantilever beam.
  • 专利号:   CN102253285-A
  • 发明人:   ZHENG X
  • 专利权人:   HUAIYIN INST TECHNOLOGY
  • 国际专利分类:   G01L001/22, G01R027/02
  • 专利详细信息:   CN102253285-A 23 Nov 2011 G01R-027/02 201201 Pages: 5 Chinese
  • 申请详细信息:   CN102253285-A CN10115687 06 May 2011
  • 优先权号:   CN10115687

▎ 摘  要

NOVELTY - The method involves employing a Lift-off technology to manufacture metal electrodes of a micron size scale on a surface of graphene for detecting changes of resistance, regulating size and spacing distance of the metal electrodes. An equal-stress cantilever beam is utilized as a stress exerting carrier. A graphene silicon sheet is adhered with detection electrodes. A highly precise stress sheet is adhered on a surface of the equal-stress cantilever beam. Concentrated force is exerted on a terminal of the equal-stress cantilever beam to deform the beam. USE - Method for detecting piezoresistive factors of graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of a graphene piezoresistive factors detecting method.