• 专利标题:   Manufacture of thin film used for field effect transistor, involves providing graphene layer on one surface of substrate, functionalizing other surface opposite to one surface of substrate using reactant, depositing thin film on functionalized graphene layer, and separating thin film by heating.
  • 专利号:   WO2023075277-A1, KR2023060014-A
  • 发明人:   LEE G H, RYU H J, RYU H
  • 专利权人:   UNIV SEOUL NAT R DB FOUND
  • 国际专利分类:   C01B032/182, H01L021/02
  • 专利详细信息:   WO2023075277-A1 04 May 2023 H01L-021/02 202348 Pages: 25
  • 申请详细信息:   WO2023075277-A1 WOKR015921 19 Oct 2022
  • 优先权号:   KR144189

▎ 摘  要

NOVELTY - Manufacture of thin film (17) involves providing a graphene layer (13) on one surface of a substrate (11), functionalizing the surface by treating the other surface opposite to the one surface of the graphene layer provided with the substrate using a reactant, depositing a thin film on the other surface of the functionalized graphene layer (15) to form a composite, and separating the thin film from the composite (100) by heating. USE - Manufacture of thin film (claimed) e.g. ferroelectric film, metal film, semiconductor film, and insulating film used for field effect transistor. ADVANTAGE - The method enables production of thin film having high quality, and excellent flexibility and usability, and suppressed generation of defects and foreign substance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the thin film. DESCRIPTION OF DRAWING(S) - The drawing shows schematic view illustrating manufacture of the thin film. 11Substrate 13Graphene layer 15Functionalized graphene layer 17Thin film 100Composite