▎ 摘　　要

NOVELTY - Epitaxial graphene growth and transfer on gallium nitride substrate by chemical vapor deposition and chemical etching involves placing surface of silicon carbide substrate (6H-SiC) in metal organic chemical vapor deposition (MOCVD) reactor, adding gallium and ammonia mixed gas, reacting for 0.5-1 hour, producing 1-3 mu m gallium nitride substrate, growing graphene by chemical vapor deposition for 10-20 minutes, cooling to room temperature, spin coating polymethyl methacrylate, air drying, soaking in 0.5 g/mL potassium hydroxide solution and removing gallium nitride layer by chemical etching. USE - Epitaxial graphene growth and transfer on gallium nitride substrate by chemical vapor deposition and chemical etching (claimed). DETAILED DESCRIPTION - Epitaxial graphene growth and transfer on gallium nitride substrate by chemical vapor deposition and chemical etching comprises placing surface of silicon carbide substrate (6H-SiC) in metal organic chemical vapor deposition (MOCVD) reactor, adding gallium and ammonia mixed gas with gallium flow of 50-200 mu mol/minute and ammonia flow of 1000-3000 standard cm3/minute, reacting for 0.5-1 hour, producing 1-3 mu m gallium nitride substrate, vacuumizing, ensuring pressure is not higher than 10-6 torr, depositing 1-2 mu m copper film by electron beam evaporation on gallium nitride substrate, adding hydrogen gas with flow rate of 1-20 standard cm3/minute, heating at 900-1000 degrees C, thermal annealing copper film for 20-60 minutes, adding hydrogen gas with flow rate of 20-200 standard cm3/minute and methane with flow rate of 2-20 standard cm3/minute, growing graphene by chemical vapor deposition for 10-20 minutes, cooling to room temperature, removing, spin coating polymethyl methacrylate, air drying, soaking in 0.5 g/mL potassium hydroxide solution, removing gallium nitride layer by chemical etching, peeling silicon carbide substrate layer, removing copper film from potassium hydroxide solution, floating on 50-70 g/L ammonium dithionite (NH4)3(S2O4)2 aqueous solution, removing copper film by chemical etching, removing from ammonium dithionite solution, heating at 120 degrees C for 30 minutes, adding insulating substrate, cooling, soaking in acetone, removing polymethyl methacrylate, washing with ethanol and drying with pure nitrogen.