▎ 摘　　要

NOVELTY - Graphene substrate (100) comprises a substrate (110) having an adhesion force of more than 0.08 nN/nm, a graphene layer (120) provided on the substrate and a dielectric layer (130) provided on the graphene layer. The adhesion of the substrate is measured using a silicon tip. USE - The graphene substrate is useful in transistor (claimed) as electronic device having excellent operation characteristics and high reliability. ADVANTAGE - The graphene substrate has high adhesion force. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for: (1) transistor comprising a substrate having an adhesion force of more than 0.08 nN/nm, a graphene layer provided on the substrate, a dielectric layer provided on the graphene layer, a gate electrode provided on the dielectric layer and a source electrode and a drain electrode which are in contact with both ends of the graphene layer; and (2) manufacturing a graphene substrate, comprising providing a substrate having an adhesion force of more than 0.08 nN/nm, forming a graphene layer on the substrate and forming a dielectric layer on the graphene layer. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the graphene substrate. Graphene substrate (100) Substrate (110) Graphene layer (120) Dielectric layer (130)