• 专利标题:   Graphene/gallium arsenide solar cell, comprises back electrode, n-type doped or p-type doped gallium arsenide layer, graphite alkenyl layer, dielectric layer, gate electrode, front electrode and disposed graphene layer.
  • 专利号:   CN104576787-A, CN104576787-B
  • 发明人:   CHEN H, LIN S, LI X, LUO J, XU Z, WANG P, LI E, ZHANG C
  • 专利权人:   UNIV ZHEJIANG
  • 国际专利分类:   H01L031/0352, H01L031/18
  • 专利详细信息:   CN104576787-A 29 Apr 2015 H01L-031/0352 201551 Pages: 6 Chinese
  • 申请详细信息:   CN104576787-A CN10827634 29 Dec 2014
  • 优先权号:   CN10827634

▎ 摘  要

NOVELTY - A graphene/gallium arsenide solar cell comprises a back electrode, a n-type doped or p-type doped gallium arsenide layer, a graphite alkenyl layer, a dielectric layer, a gate electrode, a front electrode and a disposed graphene layer. USE - Graphene/gallium arsenide solar cell. ADVANTAGE - The solar cell has improved photoelectric conversion efficiency. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing graphene/gallium arsenide solar cell, which involves cleaning n-type doped or p-type doped gallium arsenide chip, preparing back electrode, soaking the chip in chemical solution for 5-30 seconds and drying to obtain graphene/gallium arsenide sheet, followed by assembling the sheet with back electrode, graphite alkenyl layer, dielectric layer, gate electrode, front electrode and disposed graphene layer.