▎ 摘　　要

NOVELTY - Structure (I) comprises a layer of graphene supported on a substrate, which is pre-selected to have a coefficient of thermal expansion that is either matched within 10% of that of graphene or mis-matched, for inducing controlled stress in the graphene layer to control electrical and/or mechanical properties of devices fabricated in the graphene layer. USE - (I) is useful for fabricating electrical devices. ADVANTAGE - The engineered or controlled stress induced in the graphene layer controls the electrical and/or mechanical properties of devices fabricated in the graphene layer. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) the preparation of (I), comprising providing the substrate; and forming the layer of graphene on it; and (2) controlling stress in a graphene layer supported on a substrate having a coefficient of thermal, comprising: providing a substrate having either a positive coefficient of thermal expansion or a negative coefficient of thermal expansion over a temperature range, at least a portion of which is above room temperature; and forming a layer of graphene disposed on a surface of the substrate, where controlled stress induced in the graphene layer controls electrical properties and/or mechanical properties of devices fabricated in the graphene layer. DESCRIPTION OF DRAWING(S) - The figure shows a side elevation view of a graphene-insulator-graphite structure. Graphite structure (10) Graphite substrate (12) Insulating layer (14) Graphene sheet. (16)