• 专利标题:   Super-sliding structure based Schottky micro-generator has super-sliding contact and Schottky contact that are formed between conductive layer and semiconductor layer, where conductive layer moves relative to semiconductor layer.
  • 专利号:   CN112636629-A, CN215072193-U, WO2022143463-A1
  • 发明人:   ZHENG Q, HUANG X, XIANG X
  • 专利权人:   UNIV TSINGHUA RES INST IN SHENZHEN, UNIV TSINGHUA, UNIV TSINGHUA RES INST IN SHENZHEN, UNIV TSINGHUA
  • 国际专利分类:   H02N001/04
  • 专利详细信息:   CN112636629-A 09 Apr 2021 H02N-001/04 202137 Pages: 13 Chinese
  • 申请详细信息:   CN112636629-A CN11611712 30 Dec 2020
  • 优先权号:   CN11611712, CN23274342

▎ 摘  要

NOVELTY - The Schottky micro-generator has a metal electrode layer formed on a side of a semiconductor layer. A super-sliding contact and a Schottky contact are formed between a conductive layer and the semiconductor layer. The metal electrode layer and the semiconductor layer form an ohmic contact. The conductive layer moves relative to the semiconductor layer and outputs an electric signal. The conductive layer is made of graphite or graphene. USE - Super-sliding structure based Schottky micro-generator. ADVANTAGE - The effect of outputting stable and high-density direct current signals makes the conductive layer and the semiconductor layer have extremely low friction and wear-free conditions during relative sliding, and ensure stable and high-density output, which effectively increases the service life and output density. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a preparation method for a Schottky micro-generator. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a Schottky micro-generator.