▎ 摘　　要

NOVELTY - The method involves processing graphene with a copper substrate by illuminating light from an infrared lamp, where light irradiation time is greater than 1-30 min. Growth quality of the graphene in the copper substrate is measured by an optical microscope or optical magnifier. Graphene annealing process is carried out at temperature of 100-300 degrees Celsius. USE - Graphene growth quality detecting method. ADVANTAGE - The method enables performing graphene growth quality detecting process in a quick and simple manner so as to enable a user to know growth condition of the graphene in an accurate manner. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating a graphene growth quality detecting method.