• 专利标题:   Graphene-silicon hetero-junction based passive position sensitive detector, has graphene surface formed on silicon substrate, where resistivity of substrate is specific in range and metal electrode is located on rear surface of substrate.
  • 专利号:   CN107256899-A, CN107256899-B
  • 发明人:   DING R, LIANG Z, NI Z, WANG W
  • 专利权人:   TAIZHOU SUNANO NEW ENERGY CO LTD, TAIZHOU FIPHENE OPTOELECTRONICS CO LTD
  • 国际专利分类:   H01L031/028, H01L031/109, H01L031/18
  • 专利详细信息:   CN107256899-A 17 Oct 2017 H01L-031/028 201776 Pages: 7 Chinese
  • 申请详细信息:   CN107256899-A CN10504755 28 Jun 2017
  • 优先权号:   CN10504755

▎ 摘  要

NOVELTY - The detector has a graphene surface formed on a silicon substrate, where resistivity of the silicon substrate is about 1-10 ohm cm. A metal electrode is located on a rear surface of the silicon substrate. The graphene surface is formed with a single-graphene layer and a dual-graphene layer. An upper part of the metal electrode is contained with gold, nickel or platinum. USE - Graphene-silicon hetero-junction based passive position sensitive detector. ADVANTAGE - The detector can obtain graphene-based hetero-junction silicon, increase working wavelength and reduce power consumption rate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene-silicon hetero-junction based passive position sensitive detector manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a graphene-silicon hetero-junction based passive position sensitive detector. '(Drawing includes non-English language text)'