• 专利标题:   Method for preparing copper-indium-gallium-selenium solar cell assembly, involves utilizing composite thin film that carries graphene to encapsulate molybdenum layer coating and copper indium gallium selenium thin film.
  • 专利号:   WO2019205458-A1, CN110416326-A
  • 发明人:   ZHAO S, YANG L, YE Y, WANG L
  • 专利权人:   BEIJING APOLLO DING RONG SOLAR TECHNOLOG, BEIJING BOYANG DIONGRONG PHOTOVOLTAIC
  • 国际专利分类:   H01L031/0224, H01L031/072, H01L031/18
  • 专利详细信息:   WO2019205458-A1 31 Oct 2019 H01L-031/0224 201986 Pages: 22 Chinese
  • 申请详细信息:   WO2019205458-A1 WOCN106071 18 Sep 2018
  • 优先权号:   CN10401318, CN20628805

▎ 摘  要

NOVELTY - The method involves successively forming a molybdenum layer coating, a copper indium gallium selenium thin film, a cadmium sulfide thin film and an intrinsic zinc oxide thin film on a substrate. A composite thin film that carries graphene is utilized to encapsulate the molybdenum layer coating, copper indium gallium selenium thin film, cadmium sulfide thin film and intrinsic zinc oxide thin film, where the graphene-based composite thin film comprises a graphene thin film and a nanowire placed on the graphene thin film. USE - Method for preparing a copper-indium-gallium-selenium solar cell assembly. ADVANTAGE - The method enables utilizing the composite thin film that carries graphene to encapsulate the molybdenum layer coating, copper indium gallium selenium thin film, cadmium sulfide thin film and intrinsic zinc oxide thin film, thus improving conversion efficiency of the copper-indium-gallium-selenium solar cell assembly. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) a copper-indium-gallium solar battery assembly (2) a method for manufacturing a copper-indium-gallium-selenium solar battery component. DESCRIPTION OF DRAWING(S) - The drawing shows a sequence diagram illustrating a method for preparing a copper-indium-gallium-selenium solar cell assembly. '(Drawing includes non-English language text)' Step for preparing back electrode (S110) Step for preparing light absorption layer (S120) Step for preparing buffer layer (S130) Step for preparing window layer (S140) Step for depositing intrinsic zinc oxide on surface of cadmium sulfide thin film to form intrinsic zinc oxide thin film (S141)