• 专利标题:   Spectral absorption enhanced graphenesilicon-based solar battery, has rear electrode fixed on monocrystalline silicon piece that is formed with surface of graphene thin film layer, where film layer is provided with silicon nitride film.
  • 专利号:   CN205900557-U
  • 发明人:   KUANG Y, MA Y, WEI Q, NI Z, ZHU D, CHEN W, YANG X, FENG J
  • 专利权人:   CHANGSHU INST TECHNOLOGY, ZHONGLI TALSESUN SOLAR CO LTD
  • 国际专利分类:   H01L031/0216
  • 专利详细信息:   CN205900557-U 18 Jan 2017 H01L-031/0216 201711 Pages: 5 Chinese
  • 申请详细信息:   CN205900557-U CN20817520 29 Jul 2016
  • 优先权号:   CN20817520

▎ 摘  要

NOVELTY - The utility model claims a spectral absorption enhanced graphene-silicon based solar cell, comprising a back electrode, a back electrode set on the monocrystalline silicon piece, monocrystal silicon sheet is provided with a silicon dioxide layer, the silicon dioxide layer is an annular structure having a through-hole, the silicon dioxide layer through holes exposed on mono-crystalline silicon surface provided with graphene film, graphene layer is provided with silicon nitride film improves the absorptivity of the spectrum. The utility model has simple structure, low cost, stable preparation technique is mature, silicon nitride film can increase absorption rate of spectrum, especially can improve the absorption of long wavelength spectrum, thereby improving the conversion efficiency of graphene silicon-based solar cell.