▎ 摘　　要

NOVELTY - Semiconductor device, comprises a substrate (102) and a fin structure (104) on the substrate, and includes an epitaxial region (105), an etch stop layer on the epitaxial region, an interlayer dielectric layer on the etch stop layer, a metal contact through etch stop layer and interlayer dielectric layer, and a graphene film at interfaces between the metal contact and each of the epitaxial region, the etch stop layer, and the interlayer dielectric layer. USE - Semiconductor device. ADVANTAGE - The semiconductor device enables to increase demand for higher storage capacity, faster processing systems, higher performance, and cost-effective. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of forming a semiconductor device, which involves: forming a fin structure with an epitaxial layer; forming a catalyst layer in an opening that exposes a top surface of the epitaxial layer; forming a graphene film at an interface between the catalyst layer and the epitaxial layer; and forming a metal plug on the graphene film to fill the opening. DESCRIPTION OF DRAWING(S) - The drawing shows isometric view of semiconductor device. 102Substrate 104Fin structure 105Epitaxial region 108Gate structure 118Gate electrode