▎ 摘　　要

NOVELTY - The preparation method of composite graphene/carbon black semiconductor polymer involves using ethylene-vinyl acetate copolymer, graphene oxide/polyaniline compound, inorganic filler, carbon black, and crosslinking agent, dispersing graphene oxide/polyaniline compound in an organic solvent to obtain a graphene/polystyrene dispersion, mixing graphene/polyaniline dispersion with inorganic filler, filtering, and drying to obtain graphene/inorganic filler composite material. USE - Preparation of composite graphene/carbon black semiconductor polymer (claimed). ADVANTAGE - The method enables the preparation of composite graphene/carbon black semiconductor polymer with excellent agglomeration resistance, and low carbon black amount. DETAILED DESCRIPTION - The preparation method of composite graphene/carbon black semiconductor polymer involves (i) using 60-70 %mass ethylene-vinyl acetate copolymer, 1-3 %mass graphene oxide/polyaniline compound, 10-15 %mass inorganic filler, 15-20 %mass carbon black, and 1-1.4 %mass crosslinking agent, dispersing graphene oxide/polyaniline compound in an organic solvent to obtain a graphene/polystyrene dispersion, mixing graphene/polyaniline dispersion with inorganic filler, filtering, and drying to obtain composite graphene/inorganic filler composite material, (ii) melt-blending composite graphene/inorganic filler composite material, ethylene-vinyl acetate copolymer, carbon black, and crosslinking agent, and hot pressing, or mixing composite graphene/inorganic filler composite material, carbon black, and crosslinking agent in a solvent, removing the solvent, and hot pressing.