▎ 摘　　要

NOVELTY - Semiconductor element has substrate comprising a trench, a source region (71), and a drain region (72). The source region and a drain region separated apart from each other by the trench. A gate insulating layer covering a bottom surface and a sidewall of the trench. A gate electrode comprising a lower buried portion and an upper buried portion with the gate insulating layer around. The lower buried portion filling a lower region of the trench. The upper buried portion being on the lower buried portion and filling an upper region of the trench. S capping layer on the gate electrode. The lower buried portion (41) comprises a barrier layer and a first conductive layer. The barrier layer is in the trench. The barrier layer (31) covers a bottom surface of the gate insulating layer and a lower region of a sidewall of the gate insulating layer. The barrier layer surrounds the first conductive layer (32). The first conductive layer fills the lower region of the trench. USE - Semiconductor element used in various integrated circuit devices, such as memories, driving IC, logic devices. ADVANTAGE - The semiconductor element has effectively reduced gate induced drain leakage. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: 1. an electronic system, which comprises: a controller, a memory configured to store instructions executed by the controller, the memory comprising the semiconductor element, and an input/output device coupled to the controller; and 2. a method of fabricating a semiconductor element, which involves: (a) forming a trench in a substrate; (b) forming a gate insulating layer to cover a bottom surface and a sidewall of the trench; (c) forming a gate electrode on the gate insulating layer in the trench; (d) forming a capping layer on the gate electrode; and (e) forming a source region and a drain region in the substrate respectively on both sides of the gate electrode, where the forming of the gate electrode comprises forming a barrier layer in the trench, forming a two-dimensional material layer in the trench, and forming a conductive layer in the trench, the barrier layer covers a bottom surface of the gate insulating layer and a lower region of a sidewall of the gate insulating layer, the two-dimensional material layer covers an upper region of the sidewall of the gate insulating layer, and the conductive layer is surrounded by the barrier layer and the two-dimensional material layer, an upper region of the conductive layer is surrounded by the two-dimensional material layer, a lower region of the conductive layer is surrounded by the barrier layer, and a work function of the upper region of the conductive layer is less than a work function of the lower region of the conductive layer. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a semiconductor element. 31Barrier layer 32First conductive layer 41Lower buried portion 71Source region 72Drain region