• 专利标题:   Manufacture of porous graphene element involves decomposing substitution source while depositing carbon monoatomic layer on substrate arranged inside deposition furnace.
  • 专利号:   KR2016002533-A, KR1670291-B1, US2017152146-A1, US9834445-B2
  • 发明人:   HEE Y K, HYEON K G, KIM H, KWON G
  • 专利权人:   KOREA INST ENERGY RES
  • 国际专利分类:   C01B031/04, B01J019/24, C01B032/186
  • 专利详细信息:   KR2016002533-A 08 Jan 2016 201623 Pages: 16 English
  • 申请详细信息:   KR2016002533-A KR081113 30 Jun 2014
  • 优先权号:   KR081113, US953965

▎ 摘  要

NOVELTY - Manufacture of porous graphene element, involves decomposing carbon source into deposition furnace, separating porosity graphene element from substrate, forming crystal defect on covalent bond unit of carbon atoms, decomposing the substitution source while depositing the carbon monoatomic layer on the substrate arranged inside the deposition furnace, and substituting for crystal defect unit with substitutional atom and in which holes passing carbon monoatomic layer are built up. USE - Manufacture of porous graphene element (claimed). DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacturing device of porous graphene element.