▎ 摘　　要

NOVELTY - The continuous preparation method of ultra-large single crystal film involves selecting single small crystal domain or nucleation site, heating at high temperature, directly or rapidly growing high-quality ultra-large single crystal film on surface of high-temperature resistant substrate and processing. The high-temperature heating zone has width of 0.005-5 cm. USE - The method is useful for continuous preparation of ultra-large single crystal film, which is useful in copper(111) film and graphene film (all claimed). ADVANTAGE - The method enables rapid, continuous and simple preparation of ultra-large single crystal film with high quality. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for device for continuous preparation of ultra-large single crystal film.