• 专利标题:   Artificial neural synapse based on organic electrochemical transistor (OECT) in artificial intelligence, intelligent robots, intelligent medical and other fields, comprises substrate, source, semiconductor layer, drain, and gate, rectangular strip-shaped source is arranged in center of substrate.
  • 专利号:   CN115656298-A
  • 发明人:   CHENG Y, XIE M, WU R, HUANG W
  • 专利权人:   UNIV CHINA ELECTRONIC SCI TECHNOLOGY
  • 国际专利分类:   G01N027/414
  • 专利详细信息:   CN115656298-A 31 Jan 2023 G01N-027/414 202316 Chinese
  • 申请详细信息:   CN115656298-A CN11309449 25 Oct 2022
  • 优先权号:   CN11309449

▎ 摘  要

NOVELTY - Artificial neural synapse based on organic electrochemical transistor (OECT) comprises substrate, source, semiconductor layer, drain, encapsulation layer, electrolyte layer and gate, a rectangular strip-shaped source is arranged in the center of the substrate, and a square semiconductor layer is arranged at the center of the source, and the width of the semiconductor layer is greater than the width of the source, a rectangular strip-shaped drain is arranged at the central position of the semiconductor layer, and the width of the drain is smaller than the width of the semiconductor layer. The encapsulation layer is set at the center of the drain, and open a square hole in the center of the encapsulation layer. The size of the opening should meet the left and right rectangular strips exposed by the drain from top view. The top of the packaging layer is covered with an electrolyte layer, and the size of the electrolyte layer should completely cover the square hole of the packaging layer. USE - Artificial neural synapse based on organic electrochemical transistor (OECT) used in artificial intelligence, intelligent robots, intelligent medical and other fields. ADVANTAGE - The artificial neural synapse based on organic electrochemical transistor (OECT) has excellent controllability, synaptic plasticity, low power consumption, micromation, and good biocompatibility. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing an artificial synapse based on OECT, which involves: a. preparing the substrate, cleaning and drying the substrate; b. preparing the source on the substrate; c. preparing a semiconductor layer on the source electrode; d. preparing a drain on the semiconductor layer; e. preparing an encapsulation layer on the substrate, and exposing the semiconductor layer between the source and the drain; f. preparing an electrolyte layer above the semiconductor layer; and g. preparing the gate connected to the dielectric layer.