• 专利标题:   Manufacturing graphene layer by performing sputtering process to form graphite layer on substrate, and performing lithography process on graphite layer for thinning graphite layer and making graphite layer thinned to become graphene layer.
  • 专利号:   US2014311894-A1, CN104109836-A, TW201441390-A, TW521076-B1, US9359210-B2
  • 发明人:   HUANG C, CHIU S, CHUNG C, WU B, HUANG J, QIU S, ZHONG C, HUANG C H, CHIU S M, CHUNG C J, WU B H
  • 专利权人:   HUANG C, CHIU S, CHUNG C, WU B, FOUND METAL IND RES DEV CENT, METAL IND RES DEV CENT
  • 国际专利分类:   C01B031/04, C23C014/06, C23C014/34, C23C014/58
  • 专利详细信息:   US2014311894-A1 23 Oct 2014 C01B-031/04 201470 Pages: 15 English
  • 申请详细信息:   US2014311894-A1 US939412 11 Jul 2013
  • 优先权号:   TW114278

▎ 摘  要

NOVELTY - Manufacturing a graphene layer, involves: performing a sputtering process to form a graphite layer on a substrate; and performing a lithography process on the graphite layer for thinning the graphite layer and then making the graphite layer thinned to become a graphene layer. USE - The method is useful for manufacturing a graphene layer (claimed), which is useful in electronic devices, superconductive materials, photo-electronic materials, heat dissipation materials or energy materials (such as fuel cell). ADVANTAGE - The method is capable of rapidly and economically manufacturing the graphene layer at low temperature without the need for catalyst (accelerator) and corrosive.