• 专利标题:   Composition useful in field effect transistor type gas sensor, comprises organic semiconductor and alkylated graphene oxide.
  • 专利号:   KR2015040076-A, KR1535619-B1
  • 发明人:   PARK C E, KIM Y, AN T K
  • 专利权人:   POSTECH ACADIND FOUND
  • 国际专利分类:   G01N027/414
  • 专利详细信息:   KR2015040076-A 14 Apr 2015 G01N-027/414 201535 Pages: 24
  • 申请详细信息:   KR2015040076-A KR118638 04 Oct 2013
  • 优先权号:   KR118638

▎ 摘  要

NOVELTY - Composition comprises organic semiconductor and alkylated graphene oxide. USE - The composition is useful in field effect transistor type gas sensor (claimed). ADVANTAGE - The composition improves sensitivity of sensor. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) method for preparing the alkylated graphene oxide composition; (2) field effect transistor type gas sensor; and (3) method for preparing the field effect transistor type gas sensor.