▎ 摘　　要

NOVELTY - The method involves directly growing 1-5 layers of graphene film on a patterned sapphire substrate by chemical vapor deposition (CVD). The patterned sapphire substrate is sequentially placed in acetone, and the substrate is cleaned using an ultrasonic cleaner in alcohol and deionized water. Each solution is washed for 3 minutes, and dried with a nitrogen gun. The 15-25 sccm of hydrogen is introduced into the CVD reaction chamber, and the surface of the patterned sapphire substrate for 10 min is pretreated. A high temperature gallium nitride having a thickness of 1-3 um is grown on a graphene/sapphire patterned substrate covered with a low temperature gallium nitride nucleation layer using a metal organic chemical vapor deposition method. The sample is taken out to obtain gallium nitride grown on the patterned sapphire substrate based on the graphene intercalation layer after the reaction chamber temperature is lowered to room temperature. USE - Method for growing gallium nitride on graphene, for fabricating gallium nitride based semiconductor device. ADVANTAGE - The method reduces the dislocations of the gallium nitride thin film grown on the graphene, improves the quality of the gallium nitride thin film. DESCRIPTION OF DRAWING(S) - The drawing shows a flow chart illustrating the method for growing gallium nitride on graphene based on patterned sapphire substrate. (Drawing includes non-English language text)