• 专利标题:   Manufacturing graphene oxide thin layer, by depositing graphene oxide film on substrate of oxidized graphite target by radio frequency magnetron sputtering, and performing microwave irradiation on oxidized graphite target to form laminate.
  • 专利号:   KR2013105063-A
  • 发明人:   HAHN S H, KIM S W, NGUYEN T K
  • 专利权人:   UNIV ULSAN FOUND IND COOP
  • 国际专利分类:   B01J019/12, C01B031/02
  • 专利详细信息:   KR2013105063-A 25 Sep 2013 C01B-031/02 201370 Pages: 18
  • 申请详细信息:   KR2013105063-A KR027180 16 Mar 2012
  • 优先权号:   KR027180

▎ 摘  要

NOVELTY - The method comprises preparing oxidized graphite target, depositing a graphene oxide film on a substrate of the oxidized graphite target by radio frequency magnetron sputtering under argon/oxygen mixed gas, and performing microwave irradiation on the oxidized graphite target to form a laminate of the exfoliated graphite. The oxidized graphite target has a carbon atom content of 87-89 wt.%, oxygen atom content of 11-13 wt.% and an impurity content of 0-3 wt.%. The mixed gas of argon/oxygen has a ratio of 1:0.1-4. The sputtering step is carried out at a pressure of 10 mTorr. USE - The method is useful for manufacturing graphene oxide thin layer (claimed), which is useful in a LCD device, electronic paper display device, organic electroluminescent display device and a solar cell. ADVANTAGE - The method is capable of economically and efficiently manufacturing the thin layer with good electrical property and controlled thickness. DETAILED DESCRIPTION - The method comprises preparing oxidized graphite target, depositing a graphene oxide film on a substrate of the oxidized graphite target by radio frequency magnetron sputtering under argon/oxygen mixed gas, and performing microwave irradiation on the oxidized graphite target to form a laminate of the exfoliated graphite. The oxidized graphite target has a carbon atom content of 87-89 wt.%, oxygen atom content of 11-13 wt.% and an impurity content of 0-3 wt.%. The mixed gas of argon/oxygen has a ratio of 1:0.1-4. The sputtering step is carried out at a pressure of 10 mTorr. The rotating speed of substrate is 5 revolutions per minute. The substrate is silicon wafer. The substrate temperature is maintained at 22-27 degrees C. The method further comprises controlling parameter consisting of thickness, deposition time, rotational velocity and temperature of the substrate. The thickness of the graphene oxide film is 0.9-1 mm. The argon/oxygen gas is injected by the division rate of 1:1. An INDEPENDENT CLAIM is included for a graphene oxide thin layer.