▎ 摘　　要

NOVELTY - Transferring gallium oxide epitaxial layer based on van der Waals film comprises (i) using chemical vapor deposition method to make polycrystalline continuous graphene film, and transferring to sapphire substrate, (ii) using pulse laser deposition method, and directly extending gallium oxide on the graphene film, (iii) adhering thermal release adhesive tape to the upper surface of gallium oxide epitaxial layer, and peeling off adhesive tape with the gallium oxide epitaxial layer evenly and completely from the original substrate, and adhering the side of thermal release adhesive with gallium oxide tightly to the target substrate, and (iv) integrally placing the target substrate on a heating stage heated to 120-150degrees Celsius, and automatically separating the tape from the surface of gallium oxide until the thermal release adhesive tape loses its viscosity after foaming. USE - The method is useful for transferring gallium oxide epitaxial layer based on van der Waals film. ADVANTAGE - The method: relieves the stress caused by lattice mismatch between the substrate and the epitaxial layer through graphene; easily peels off epitaxial layer and transfers to the target substrate through the weak van der Waals force existing between the epitaxial layer and the graphene, which can be used to realize the reuse of the original substrate or to fabricate gallium oxide self-supporting substrates and flexible devices.