• 专利标题:   Electronic device e.g. transistor, has insulating layer having space, formed on substrate, and graphene crosslinked between pair of electrodes formed on both sides of space, through space top.
  • 专利号:   JP2012212877-A, JP6019640-B2
  • 发明人:   SATO S
  • 专利权人:   DOKURITSU GYOSEI HOJIN SANGYO GIJUTSU SO, FUJITSU LTD
  • 国际专利分类:   C01B031/02, C23C016/26, H01L021/205, H01L021/314, H01L021/316, H01L021/336, H01L029/786, H01L051/05, H01L051/30, H01L051/40
  • 专利详细信息:   JP2012212877-A 01 Nov 2012 H01L-029/786 201274 Pages: 24 Japanese
  • 申请详细信息:   JP2012212877-A JP060588 16 Mar 2012
  • 优先权号:   JP064631

▎ 摘  要

NOVELTY - An electronic device has an insulating layer (2) having a space (2A), formed on substrate (1), and graphene (5) crosslinked between a pair of electrodes formed on both sides of the space, through the space top. USE - Electronic device e.g. transistor. ADVANTAGE - The electronic device is highly reliable and efficient. Graphene is formed easily and reliably without using a transfer process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of electronic device, which involves forming an insulating layer on substrate, forming space in the insulating layer, filling space with catalyst material, forming graphene in exposed surface of the catalyst material in the insulating material, forming a pair of electrodes connected to both ends of graphene on the insulating material, and partially removing graphene and catalyst material through the same portion. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic sectional view explaining the manufacturing method of transistor. (Drawing includes non-English language text) Substrate (1) Insulating layer (2) Space (2A) Graphene (5) Insulating film (9)