▎ 摘　　要

NOVELTY - The method involves cleaning the substrate and the graphene film is prepared. The layer of sacrificial layer film is coated on the surface of the graphene film. The EBL lithography process is used to obtain the initially processed graphene quantum dot array structure. The glue spreader is used to evenly coat a layer of PMMA on the composite sample as a mask glue. The reactive ion etching machine is used to etch, then removed the mask glue, annealed to remove the residual glue, and obtained a preliminary processed graphene quantum dot array structure. The FIB modification processing is performed on the initially processed graphene quantum dot array structure. The FIB system is used to irradiate the sample to reduce the edge roughness of the quantum dot array, the smoothness of the quantum dot array is ensured, and the modified graphene quantum dot array structure is obtained. The sacrificial layer thin film is etched to obtain the final graphene quantum dot array structure. USE - Method for preparing micro-nano composite of graphene quantum dot array. ADVANTAGE - The method reduces the damage of processing defects, and reduces edge roughness and line width roughness. The surface sacrificial layer EBL-assisted FIB processing technology is featured with high machining accuracy, good uniformity and low roughness. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating the method for preparing micro-nano composite of graphene quantum dot array. (Drawing includes non-English language text).