▎ 摘　　要

NOVELTY - The graphene infrared detector comprises a substrate (1), a dielectric layer (2) formed on the substrate, a source electrode (3) and a drain electrode (4), extending from the surface of the dielectrical layer to the dieelectric layer, where the structure of the source electrode and the drain electrode is asymmetric, and a graphene (5) is formed on a surface of a graphene film, the source and drain electrodes, and an infrared sensitive semiconductor film formed in the graphene film. The drain electrode is an annular structure electrode. The source electrode is a columnar electrode and the columnar electrode is arranged in the ring of the annular electrode. USE - Graphene infrared detector. ADVANTAGE - By introducing the asymmetric electrode, finishing photoelectric detection under zero bias, solving the problem that the traditional graphene infrared detector dark current is too large, by setting the infrared sensitive semiconductor film, so as to improve the response of graphene infrared photoelectric detector. DESCRIPTION OF DRAWING(S) - The drawing shows a structure diagram of a graphene infrared detector. 1Substrate 2Medium layer 3Source electrode 4Drain electrode 5Graphene