• 专利标题:   Selective tunneling theory based solar battery preparation method, involves preparing surface of flat wide gap semiconductor, transferring graphene to surface of wide gap semiconductor, and obtaining solar battery.
  • 专利号:   CN103680988-A, CN103680988-B
  • 发明人:   JIA C, GU C, GUO X
  • 专利权人:   UNIV PEKING
  • 国际专利分类:   H01G009/20
  • 专利详细信息:   CN103680988-A 26 Mar 2014 H01G-009/20 201433 Pages: 16 Chinese
  • 申请详细信息:   CN103680988-A CN10412431 11 Sep 2013
  • 优先权号:   CN10412431

▎ 摘  要

NOVELTY - The method involves preparing a surface of a flat wide gap semiconductor. A large energy gap semiconductor is contained with titanium dioxide. Graphene is transferred to the surface of the wide gap semiconductor. A light material layer is obtained. A solar battery is obtained. Mechanical polishing process is performed to polish a titanium oxide single-crystal substrate. Oxygen plasma etching process is performed. Chemical mechanical polishing process is performed to obtain a finished product. USE - Selective tunneling theory based solar battery preparation method. ADVANTAGE - The method enables greatly simplifying structure of a solar battery. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating a selective tunneling theory based solar battery preparation method.'(Drawing includes non-English language text)'