▎ 摘　　要

NOVELTY - A graphene-based LED epitaxial growth method involves utilizing plasma-enhanced chemical vapor deposition, growing a graphene layer, taking out the sapphire substrate from the plasma-enhanced chemical vapor deposition, growing n-type heavily doped aluminum nitride layer, taking out the sapphire substrate from the metal organic chemical vapor deposition reaction chamber, placing in a plasma-enhanced chemical vapor deposition reaction chamber, taking out the sapphire substrate from the plasma-enhanced chemical vapor deposition reaction chamber, placing in a metal organic chemical vapor deposition reaction chamber, growing an n-type lightly doped aluminum nitride layer, taking silicon-doped N-type gallium nitride layer, growing multiple quantum well active layer, growing P-type aluminum gallium nitride layer, growing magnesium-doped P-type gallium nitride layer, cooling the nitrogen flow rate, performing heat preservation, and turning off the heating system with the furnace cooling. USE - Method for epitaxial growth of graphene-based LED. ADVANTAGE - The method enables epitaxial growth of graphene-based LED with improved epitaxial crystal quality and photoelectric performance. DETAILED DESCRIPTION - A graphene-based LED epitaxial growth method involves utilizing plasma-enhanced chemical vapor deposition to control the pressure of the reaction chamber at 650 mtorr-800 mtorr under the radio frequency power of 25-40 W, and the flow rate of 600 sccm-800 sccm of hydrogen, 1200 sccm-1400 sccm of methane and 500 sccm-650 sccm of argon in sapphire lining, growing a high-temperature gradient graphene layer of 8-15 nm on the bottom, reducing the temperature in the reaction chamber at 1100-1020 degrees C during the growth process, and reducing the temperature gradient decreasing rate at 0.4-0.5 degrees C per second, taking out the sapphire substrate from the plasma-enhanced chemical vapor deposition in reaction chamber and placing in the reaction chamber by organometallic chemical vapor deposition, maintaining the growth temperature at 850-900 degrees C under the growth pressure of 450-550 mbar, and the flow rate to the reaction chamber is 70-80 L/min of ammonia, 400-500 L/min of silane, 200-240 sccm of trimethylaluminum source, growing n-type heavily doped aluminum nitride layer with thickness of 50-70 nm on the high temperature gradient graphene layer under the growth process of medium silicon doping concentration increases linearly from 7E+19-9E+19 atoms/cm3, and the silicon doping concentration increases gradually by 5E+16 atoms/cm3 per second, taking out the sapphire substrate from the metal organic chemical vapor deposition reaction chamber, placing in a plasma-enhanced chemical vapor deposition reaction chamber, maintaining the reaction chamber pressure at 650-800 mtorr and the radio frequency power is 25-40 W, reducing the temperature of the reaction chamber at 600 degrees C under the flow rate of 600-800 sccm, 1200-1400sccm of methane and 500-650 sccm of argon, growing a low-temperature gradient graphene layer of 8-15 nm on the n-type heavily doped aluminum nitride layer, increasing the temperature in the reaction chamber at 600-700 degrees C during the growth process, reducing the temperature ramp rate at 0.8-1 degrees C per second, taking out the sapphire substrate from the plasma-enhanced chemical vapor deposition reaction chamber, placed in a metal organic chemical vapor deposition reaction chamber, maintaining at a growth temperature of 850-900 degrees C, a growth pressure of 450-550 mbar, and introducing a flow rate of 70-80 L/min of ammonia into the reaction chamber, 250-300 L/min silane, 200-240 sccm trimethylaluminum source, growing an n-type lightly doped aluminum nitride layer having a thickness of 50-70 nm on the low temperature graded graphene layer under the silicon doping concentration is 7E+16 atoms/cm3 linear gradient is reduced to 6E+16 atoms/cm3, and reducing the decrease rate of silicon doping concentration is reduced by 1E+14 atoms/cm3 per second, taking silicon-doped N-type gallium nitride layer, periodically growing multiple quantum well active layer, growing P-type aluminum gallium nitride layer, growing magnesium-doped P-type gallium nitride layer, cooling at 700-800 degrees C under the nitrogen flow rate of 100-150 L/min, performing heat preservation of 20-30 minutes, and turning off the heating system with the furnace cooling.