▎ 摘　　要

NOVELTY - Preparation of graphene transistor circuit device involves providing boron nitride/graphene/boron nitride heterojunction on a metal substrate, transferring the heterojunction from the metal substrate to desired substrate, forming mask on the heterojunction, performing electron beam exposure to form desired transistor structure, dry etching, removing mask, forming electron beam adhesive layer on heterojunction, performing electron beam exposure to form source electrode, drain electrode and gate electrode region of the transistor on the heterojunction, and performing metal evaporation to form electrode layer comprising source electrode, drain electrode, and gate electrode. USE - Preparation of graphene transistor circuit device. ADVANTAGE - The method opens energy gap of graphene and forms an electrode layer directly on the boron nitride, and thereby protecting the graphene and avoiding the electrical performance degradation caused by adsorption of gas molecules due to exposure of graphene to the atmosphere. The transistor circuit device has excellent performance due to use of electrical properties of graphene. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for graphene transistor circuit device, which comprises boron nitride/graphene/boron nitride heterojunction provided on the substrate.