• 专利标题:   Manufacture of graphene-grown substrate used for electronic component, involves growing graphene on metallic layer containing pure metal or its alloy, using mixture of carbon-containing gas and etching gas.
  • 专利号:   KR2016084351-A
  • 发明人:   LEE Y T
  • 专利权人:   LEE Y T
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   KR2016084351-A 13 Jul 2016 C01B-031/04 201661 Pages: 40
  • 申请详细信息:   KR2016084351-A KR083950 04 Jul 2016
  • 优先权号:   KR122144, KR083950

▎ 摘  要

NOVELTY - Manufacture of graphene-grown substrate involves growing graphene on a metallic layer containing pure metal or its alloy, using mixture of carbon-containing gas and etching gas. USE - Manufacture of graphene-grown substrate used for electronic component. ADVANTAGE - The method enables manufacture of graphene-grown substrate with suppressed generation of defects.