▎ 摘　　要

NOVELTY - Substrate processing method for processing a substrate, includes an intake step of taking a substrate into a processing vessel, a first step of removing an oxygen-containing layer on the substrate using a plasma of a first gas mixture including a hydrogen-containing gas, a second step of forming a nucleation layer on the substrate using a plasma of a second gas mixture including a carbon-containing gas, and a third step of forming a graphene film on the substrate using the plasma of the second gas mixture. USE - The substrate processing method is used for substrate processing (claimed). ADVANTAGE - The method is capable of forming a graphene film while removing an oxygen-containing layer on the substrate while reducing damage to the substrate. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a substrate processing apparatus, comprising a processing container that can accommodate substrates, and a control unit configured to control the substrate processing apparatus so as to load the substrate into the processing container, where the control unit is configured to control the substrate processing apparatus to remove an oxygen-containing layer on the substrate with plasma of a first mixed gas containing a hydrogen-containing gas, configured to control the substrate processing apparatus to form a nucleation layer on the substrate with a plasma of a second mixed gas containing a carbon-containing gas, and where the control unit is configured to control the substrate processing apparatus to form a graphene film on the substrate with the plasma of the second mixed gas.