▎ 摘　　要

NOVELTY - The semiconductor device comprises a catalytic metal film (220) formed above a substrate (200), a graphene film (230) formed on the catalytic metal film, a contact plug (240) connected to the graphene film, an adjustment film (250) formed in a region other than a region connected to the contact plug of a surface of the graphene film to adjust a Dirac point position in a same direction as the region connected to the contact plug with respect to a Fermi level, and a dielectric film formed on the adjustment film and on a side surface of the contact plug. USE - Used as a semiconductor device such as NAND-type memory devices. ADVANTAGE - The semiconductor device exhibits high current density resistance, mobility and heat resistance, improved high mechanical strength, and low-conductivity. DETAILED DESCRIPTION - The semiconductor device comprises a catalytic metal film (220) formed above a substrate (200), a graphene film (230) formed on the catalytic metal film, a contact plug (240) connected to the graphene film, an adjustment film (250) formed in a region other than a region connected to the contact plug of a surface of the graphene film to adjust a Dirac point position in a same direction as the region connected to the contact plug with respect to a Fermi level, and a dielectric film formed on the adjustment film and on a side surface of the contact plug. An energy band structure in the region connected to the adjustment film of the surface of the graphene film is symmetric with respect to an energy axis including a Dirac point and a straight line in a wave number direction. A difference between the Dirac point position in the region connected to the contact plug of the surface of the graphene film and the Dirac point position in the region connected to the adjustment film is less than or equal to plus minus 0.5 eV. The adjustment film comprises a material consisting of a metal, an organic compound and/or an inorganic compound, and is formed thinner than the contact plug. The graphene film is formed with 1-20 layers. An INDEPENDENT CLAIM is included for a method for fabricating a semiconductor device. DESCRIPTION OF DRAWING(S) - The diagram shows a schematic view of a semiconductor device. Substrate (200) Catalytic metal film (220) Graphene film (230) Contact plug (240) Adjustment film (250) Barrier metal film. (270)