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  • 专利标题:   Semiconductor device has recess which is formed in substrate beneath graphene sheet via etchant passing through graphene sheet formed on substrate.
  • 专利号:   US2014151643-A1, US8803132-B2
  • 发明人:   FARMER D B, FRANKLIN A D, SMITH J T
  • 专利权人:   INT BUSINESS MACHINES CORP, INT BUSINESS MACHINES CORP
  • 国际专利分类:   H01L029/78, H01L029/06, H01L029/16, H01L029/66, H01L029/786
  • 专利详细信息:   US2014151643-A1 05 Jun 2014 H01L-029/78 201444 Pages: 10 English
  • 申请详细信息:   US2014151643-A1 US971071 20 Aug 2013
  • 优先权号:   US693700, US971071

▎ 摘　　要

NOVELTY - The semiconductor has a graphene sheet (102) which is formed on a substrate (104), and a source (108) coupled to graphene sheet and drain (110) coupled to graphene sheet and separated from source by gap. A slot is formed in the graphene sheet having a width that allows an etchant to pass through the graphene sheet. A recess is formed in the substrate beneath the graphene sheet via etchant passing through the graphene sheet. USE - Semiconductor device such as self-aligned graphene transistor (claimed). ADVANTAGE - Reduces the impact of stray charge or adsorbed molecules by providing dual gate structure. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic diagram of the graphene field-effect transistor. Graphene sheet (102) Substrate (104) Source (108) Drain (110) Gate metal (124)