▎ 摘　　要

NOVELTY - The method involves forming a mold structure on a substrate (100), where mold structure includes sacrificial films and interlayer insulating films alternately stacked along direction perpendicular to upper surface. Channel holes penetrating the mold structure are formed. A data storage pattern and an amorphous channel layer are sequentially formed on inner surfaces of the channel holes. A heat transfer material layer is formed by filling a remainder of each channel hole, and covers an upper surface of the structure. Laser annealing process is performed on a thermal interface material layer. A portion of the layer is converted into a crystalline channel layer by the laser annealed process. The layer is made of aluminum, copper, silver, gold, tungsten, palladium or graphene. USE - Method for manufacturing a semiconductor device. ADVANTAGE - The crystalline channel layer can be easily formed, and the electrical characteristics of the semiconductor device can be improved. The deterioration of the peripheral circuit structure not in contact with the heat conductive material layer is prevented, so that the reliability and electrical characteristics are improved. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic representation of a semiconductor device. D1, D2, D3Directions 100Substrate 110Preliminary source semiconductor film