▎ 摘　　要

NOVELTY - The absorber has a rear electrode doped silicon (Si) layer (2) formed on a surface of a strontium titanate substrate layer (1). A graphene-silicon dioxide (SiO2) active area is located at an upper part of the rear electrode doped Si layer. An alumina spacing layer (5) is formed on the surface of the graphene-SiO2 active area. A strontium titanate spherical shell structure layer (6) is provided with a periodic array of strontium titanate spherical shell and formed on the surface of the alumina spacing layer. An electric control unit controls the Fermi level of the graphene. USE - Strontium titanate spherical shell structure-based adjustable terahertz (THz) wave metamaterial absorber for use in a THz function device for sensing, imaging, and detection fields. ADVANTAGE - The absorber changes the Fermi level of the graphene by the size of the bias voltage or changes the external temperature to realize the effective modulation of the incident terahertz wave. The absorption frequency of the absorber can be adjusted between 0.9037-0.7229, and the absorption center frequency modulation depth can reach 71.90 percentage under the action of graphene. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of an absorber modulation mechanism of the strontium titanate spherical shell structure-based adjustable THz wave metamaterial absorber. (Drawing includes non-English language text) Strontium titanate substrate layer (1) Rear electrode doped Si layer (2) SiO2 insulating layer (3) Graphene layer (4) Alumina spacing layer (5) Strontium titanate spherical shell structure layer (6)