• 专利标题:   Manufacture of non-catalytic low-temperature graphene-grown substrate for electronic component, involves performing inductively-coupled plasma chemical vapor deposition of gas containing carbon on substrate, and supplying etching gas.
  • 专利号:   KR2016002445-U
  • 发明人:   LEE Y T
  • 专利权人:   LEE Y T
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   KR2016002445-U 12 Jul 2016 C01B-031/04 201661 Pages: 67
  • 申请详细信息:   KR2016002445-U KR003766 29 Jun 2016
  • 优先权号:   KR160568, KR003766

▎ 摘  要

NOVELTY - Manufacture of non-catalytic low-temperature graphene-grown substrate involves forming a substrate free of catalyst layer at the surface, supplying a gas containing carbon at 500 degrees C or less, performing inductively-coupled plasma chemical vapor deposition, supplying etching gas, adsorbing hydrocarbon radicals, diffusing on the surface of nucleus by Van der Waals force, growing hetero-epitaxially, performing low pressure chemical vapor deposition constantly and growing graphene. USE - Manufacture of non-catalytic low-temperature graphene-grown substrate for electronic component.