▎ 摘　　要

NOVELTY - The apparatus has a graphene layer (12) that is provided on a substrate (10). An ohmic electrode (25) containing nickel is provided on the graphene layer. Ratio of the nickel-carbon bond with respect to a carbon-carbon bond in the surface of the graphene layer on which the ohmic electrode is contacted is 30 % or more. The ohmic electrode containing the nickel layer (25a) contacted the graphene layer. USE - Electronic apparatus such as FET. Can also be used in transistor. ADVANTAGE - The deterioration of the graphene layer under the gate electrode is suppressed. The contact resistance of the ohmic electrode and the graphene layer can be reduced. The heat processing atmosphere, heat processing temperature, and the heat processing time can be suitably set according to the film thickness and film quality of the graphene layer. The short circuit with the ohmic electrode and the gate electrode can be suppressed. The contact resistance of nickel layer and the graphene layer can be reduced. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacturing method of electronic apparatus. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the electronic apparatus. Substrate (10) Graphene layer (12) Obmic electrode (25) Nickel layer (25a) Metal layer (25b)