▎ 摘　　要

NOVELTY - The detector has an n-type silicon substrate (1) whose upper surface is arranged on a silicon dioxide isolation layer (2). A silicon window is opened on the isolation layer. A top electrode (3) is fixed in the upper surface of the isolation layer. The silicon window and the silicon substrate are covered with a boron-doped silicon quantum dot film (5). A graphene film (4) is arranged on an upper surface of the top electrode. A central part of the graphene film is in contact with the quantum dot film. The silicon substrate is arranged with an upper surface of a bottom electrode (6). USE - Graphene/boron-doped silicon quantum dot/silicon based photoelectric detector. ADVANTAGE - The detector is easy to integrate and simple in structure, has high response degree, quick response speed, large internal gain and high switch ratio, and reduces operating cost. DETAILED DESCRIPTION - The top electrode is metal film electrode. The bottom electrode is metal film electrode. An INDEPENDENT CLAIM is also included for a graphene/boron-doped silicon quantum dot/silicon based photoelectric detector preparation method. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a graphene/boron-doped silicon quantum dot/silicon based photoelectric detector. N-type silicon substrate (1) Silicon dioxide isolation layer (2) Top electrode (3) Graphene film (4) Boron-doped silicon quantum dot film (5) Bottom electrode (6)