▎ 摘　　要

NOVELTY - The detector has a structure layer provided with an n-type doped silicon slice (4). A photosensitive layer (3) i.e. p-type zinc selenide nano wire, is fixed to a graphene electrode. An insulation layer (2) is arranged on a periphery of the photosensitive layer. The insulting layer insulates the n-type doped silicon slice and the graphene electrode. A graphite electrode (1) is arranged on the insulating layer. The p-type zinc selenide nano wire is provided with ammonia gas, silver sulfide powder, gaseous phosphine and bismuth powder. USE - P-type zinc selenide nano wire/n-type silicon heterojunction-based photoelectric detector. ADVANTAGE - The detector can effectively improves switching ratio of a photoelectric detector body according to an electric signal and increase area of a photosensitive layer of the photoelectric detector. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a p-type zinc selenide nano wire/n-type silicon heterojunction-based photoelectric detector manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a p-type zinc selenide nano wire/n-type silicon heterojunction-based photoelectric detector. Graphite electrode (1) Insulation layer (2) Photosensitive layer (3) N-type doped silicon slice (4)