▎ 摘　　要

NOVELTY - Full covalent bond connecting full reduction-oxidation graphene field effect transistor comprises a substrate, a RGO layer, semi-RGO layer and GO layer, the RGO layer is more pairs, where each pair is 2 RGO layer and respectively as the full covalent bond connecting full reduction source electrode and drain electrode of one FET of the oxide graphene field effect transistor is, 2 of the RGO layer are parallel to each other and supported on the substrate. The semi-RGO layer is supported on the substrate of the RGO layer, used as a semiconductor layer, the GO layer is loaded on the semi-RGO layer. USE - Full covalent bond connecting full reduction-oxidation graphene field effect transistor. ADVANTAGE - The full covalent bond connecting full reduction-oxidation graphene field effect transistor can satisfy real-time of providing cheap, quick and simple without identification and detection requirements, can achieve the purpose of simultaneously detecting different cancer marker, effectively reduces the financial resources consumption, improves the sensing sensitivity, stability and selectivity. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing a fully covalently reduced graphene oxide field effect transistor, which involves (A) treating the substrate with plasma in an oxygen environment for 5-25 minutes, repeating the method for preparing the GO monolayer on the substrate obtained 2 to 11 times, for forming a GO layer composed of a multiple of GO monolayers on the substrate; (B) keeping the substrate at 180-500 degrees C for 8-15 hours to obtain a substrate loaded with an RGO layer under the reducing atmosphere; (C) affixing a mask to the substrate loaded with the RGO layer obtained, and then depositing an aluminum film having a thickness of 20-90 nm, removing the mask after evaporation, and using plasma in an oxygen atmosphere; (D) treating the substrate for 5-30 minutes for removing the RGO layer not covered by the aluminum film to form a drain electrode and a source electrode; (E) soaking the substrate into a dilute nitric acid aqueous solution at 30-100 degrees C for 30-60 minutes, and removing the substrate to clean the substrate; (F) repeating the method of preparing the GO monolayer on the substrate obtained 2 to 11 times to form a GO composed of a multiple of GO single layers on the substrate around the RGO layer and the RGO layer floor; (G) keeping the substrate obtained at 80-160 degrees C for 4-8 hours, so that the GO layer obtained forms a semi-RGO layer; (H) repeating the preparing the GO monolayer 2-11 times on the semi-RGO layer obtained in the step 6 to form a GO layer composed of a multiple of GO monolayers on the semi-RGO layer, immersing the substrate in the silane coupling agent solution for 10-120 minutes, and taking out the substrate for the first cleaning; (I) drying the surface of the first cleaned substrate at room temperature, and drying the substrate at room temperature and immersing in the GO solution for 10-120 minutes; and (J) taking out the substrate for second cleaning.