▎ 摘　　要

NOVELTY - The structure has a graphene buffer layer (2) which is formed on an amorphous substrate (1). A nano-structure supporting layer (3) is formed on the graphene buffer layer. A nitride thin film (4) is formed on the nano-structure supporting layer. The amorphous substrate is a quartz substrate, a glass substrate or a silicon dioxide substrate, and the thickness of amorphous substrate is 0.5mm-1.0mm. The graphene buffer layer is one layer or multiple layers and the thickness is 0.4nm-3.0nm. The nano-structure supporting layer is nano-wire, nano-column, nano-cone or nano-micro-disk structure, and the thickness of nano-structure supporting layer is 100nm500nm. USE - Nitride thin film structure based on amorphous substrate. ADVANTAGE - The nitride thin film structure based on amorphous substrate prepares nitride optoelectronic device on the amorphous substrate, reduces the production cost and expands application range. The nitride thin film structure develops new road for nitride optoelectronic device preparation. The nitride thin film structure reduces the technical difficulty and production cost. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing nitride thin film structure. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the nitride thin film structure based on amorphous substrate. Amorphous substrate (1) Graphene buffer layer (2) Nano-structure supporting layer (3) Nitride thin film (4)