• 专利标题:   Preparing powdered graphene by passing inert gas into microwave plasma chemical vapor deposition to generate plasma, passing carbon source-nucleation density inhibitor mixed gas into microwave plasma chemical vapor deposition system to perform vapor phase growth and directly collecting graphene.
  • 专利号:   CN113387347-A, CN113387347-B
  • 发明人:   ZHANG J, SUN Y
  • 专利权人:   BEIJING GRAPHENE INST, UNIV PEKING
  • 国际专利分类:   C01B032/186, B82Y040/00
  • 专利详细信息:   CN113387347-A 14 Sep 2021 C01B-032/186 202191 Pages: 12 Chinese
  • 申请详细信息:   CN113387347-A CN10167294 11 Mar 2020
  • 优先权号:   CN10167294

▎ 摘  要

NOVELTY - Method for preparing powdered graphene involves (i) passing inert gas into the microwave plasma chemical vapor deposition system to generate plasma and (ii) passing a carbon source-nucleation density inhibitor mixed gas into the microwave plasma chemical vapor deposition system to perform vapor phase growth of graphene powder and directly collecting graphene powder in the exhaust gas. USE - Method for preparing powdered graphene. ADVANTAGE - The method is simple, pure and effective, realizes the regulation of the graphene size in the gas phase for the first time, and can control the appropriate increase or decrease of the graphene size, can directly obtain graphene quantum dots in the gas phase and has high crystallinity.