▎ 摘　　要

NOVELTY - Preparing electro-floating silicon non-distortion heterogeneous distortionless electric clamping of Vander Waals heterojunction field effect transistor (DEHFET) device comprises preparing P-type substrate after ion injection, forming carbon doped buffer region on P -type substrate after ion implantation, forming carbon-doped electric floating region on carbon doped buffer area and shielding region on carbon-doped electric float area, forming dielectric region on middle upper surface of shielding region, so that upper surfaces of two ends of shield region are not covered by deformation region, forming gate electrode on deformation area, manufacturing source electrode and drain electrode on both ends of carbon electrode and shielding area, and manufacturing silicon nitride film region on upper surface of gate electrode and side surfaces of dielectric region and gate electrode, providing bottom of P-type substrate with well groove, and preparing graphene pit groove in well groove. USE - The method is useful for preparing electro-floating silicon non-distortion heterogeneous DEHFET device used in space satellite working in electromagnetic damage environment, spacecraft and electronic system. ADVANTAGE - The device: can be used to reduce thermal load of the drain electrode; inhibits transient current of drain electrode; reduces in probability of triggering device logic error; has stable chemical bond nitride film between the silicon and nitrogen when the single particle bombardment device; utilizes counter ion having specific blocking ability; reduces generated electron-hole pair when the energy of the heavy ion enters the device internal drain electrode; and generates a small amount of counter ion. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for electro-floating silicon non-distortion heterogeneous DEHFET device prepared by the above-mentioned method.