• 专利标题:   Solid-state device structure for separating and isolating graphene monolayer, has single crystalline monolayer of graphene that is arranged on substrate by single transfer process and has surface area of greater than specific inches.
  • 专利号:   US2014339506-A1, US9035282-B2
  • 发明人:   DIMITRAKOPOULOS C D, FOGEL K E, KIM J, PARK H
  • 专利权人:   INT BUSINESS MACHINES CORP
  • 国际专利分类:   H01L029/16, B32B037/26, B32B038/10, B32B009/04, C01B031/00, H01L029/06
  • 专利详细信息:   US2014339506-A1 20 Nov 2014 H01L-029/16 201478 Pages: 15 English
  • 申请详细信息:   US2014339506-A1 US966690 14 Aug 2013
  • 优先权号:   US894954, US966690

▎ 摘  要

NOVELTY - The solid-state device structure has a substrate (20,22) e.g. silicon carbide substrate. A single crystalline monolayer (14) of graphene is arranged on the substrate by a single transfer process and has a surface area of greater than 15 square inches. The monolayer of graphene is patterned to form a conductive channel for electronic devices. USE - Solid-state device structure for separating and isolating graphene monolayer. ADVANTAGE - The stressor layer grips the closest monolayer, and lifting the handle substrate results in a high-quality mechanical exfoliation and lift-off of the closest monolayer. The higher quality monolayer is obtained and performance of the graphene is improved by e.g. increasing carrier mobility. Since the thicker films are mechanically robust, the cracking of exfoliated film is avoided. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the monolayer. Monolayer (14) Stressor layer (16) Adhering layer (18) Substrates (20,22) Double layer strip (25)