• 专利标题:   New covalently modified graphene material used for three-state resistive memory device.
  • 专利号:   CN110194451-A
  • 发明人:   ZHANG B, LI D, FAN F, ZHAO Z, CHEN Y
  • 专利权人:   UNIV EAST CHINA SCI TECHNOLOGY
  • 国际专利分类:   C01B032/194, H01L051/05, H01L051/30
  • 专利详细信息:   CN110194451-A 03 Sep 2019 C01B-032/194 201979 Pages: 10 Chinese
  • 申请详细信息:   CN110194451-A CN10406974 15 May 2019
  • 优先权号:   CN10406974

▎ 摘  要

NOVELTY - A covalently modified graphene material (I), is new. USE - A covalently modified graphene material (I) is used for a three-state resistive memory device (claimed). ADVANTAGE - The three-state resistive memory device containing the covalently modified graphene material (I), has good stability, is easy to prepare, and is inexpensive. DETAILED DESCRIPTION - A covalently modified graphene material of formula (I), is new. R=poly (N-vinylcarbazole) (PVK)-AZO-NH2; and x, y=89. An INDEPENDENT CLAIM is included for preparation of (I).